| PART |
Description |
Maker |
| BFR193W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
http://
|
| BFR183W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFS483 |
RF-Bipolar - NPN Silicon RF dual transistor array (2xBFR183W) for low noise, high gain broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| MRF20030RD |
MRF20030R 2 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor - Archived
|
Motorola
|
| MRF392 |
BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON
|
MOTOROLA[Motorola, Inc]
|
| MJW3281AG MJW3281A10 MJW1302AG |
Complementary NPN-PNP Silicon Power Bipolar Transistors
15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 15 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Silicon Power Bipolar Transistors
|
ON Semiconductor
|
| ISL5501507 |
MMIC Silicon Bipolar Broadband Amplifier
|
Intersil Corporation
|
| 2N5429.MOD 2N5429 |
Bipolar NPN Device in a Hermetically sealed TO66
7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA
|
Seme LAB
SEMELAB LTD
|
| 2N4231A 2N4231A-JQR-AR1 |
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-213AA
Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD
Seme LAB
|
